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sp3s* Tight-Binding Parameters for Transport Simulations in Compound SemiconductorsA genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature.
Document ID
20060034557
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
hdl:2014/18848
Authors
Klimeck, G.
Bowen, R.
Boykin, T.
Cwik, T.
Date Acquired
August 23, 2013
Publication Date
December 1, 1999
Publication Information
Publication: Superlattices and Microstructures
Distribution Limits
Public
Copyright
Other
Keywords
sp3s* tight-binding genetic algorithm effective mass

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