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Ballistic-electron-emission Microscopy of Semiconductor HeterostructuresBalistic-electron-emission microscopy has developed from its beginning as a probe of Schottky barriers into a powerful nanometer-scale method for characterizing semiconductor interfaces and hot-electron transport.
Document ID
20060035836
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
Bell, L. Douglas
Narayanamurti, Venkatesh
Date Acquired
August 23, 2013
Publication Date
November 1, 1997
Distribution Limits
Public
Copyright
Other
Keywords
Semiconductors Ballistic-electron-emission

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