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A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN GrowthA structural examination of aluminum nitride growth on [111] silicon was carried out using transmission electron microscopy. Electron diffraction indicates that the basal planes of the wurtzitic overlayer mimic the orientation of the close-packed planes of the substrate. However, considerable, random rotation in the basal plane and random out-of-plane tilts were evident. This article examines these issues with a structural examination of AlN and GaN/AlN on silicon and compares the findings to those reported in the literature.
Document ID
20060036860
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
Beye, R.
George, T.
Yang, J. W.
Khan, M. A.
Date Acquired
August 23, 2013
Publication Date
December 2, 1996
Distribution Limits
Public
Copyright
Other
Keywords
GaN AlN Si epitaxial aluminum gallium nitride

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