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Observations of Single Event Failure in Power MOSFETSThe first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.
Document ID
20060037911
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
Nichols, D.
McCarty, K.
Coss, J.
Date Acquired
August 23, 2013
Publication Date
July 19, 1994
Distribution Limits
Public
Copyright
Other
Keywords
bipolar power transistors single event test burnout or gate rupture

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