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Long-Wavelength Stacked Si(sub 1-x)/Si Heterojunction Internal Photoemission Infrared DetectorsUtilizing the low temperature silicon molecular beam epitaxy (MBE) growth of degenerately doped SiGe layers on Si, long wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Se layers have been fabricated and demonstrated.
Document ID
20060039152
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
Park, J. S.
Lin, T. L.
Jones, E. W.
Castillo, H. M. Del
George, T.
Gunapala, S. D.
Date Acquired
August 23, 2013
Publication Date
July 1, 1993
Distribution Limits
Public
Copyright
Other
Keywords
infrared detectors long wavelength enhanced quantum efficiencies

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