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(abstract) High-T(sub c) SNS Weak Links Using Oxide Normal MetalsThis work examines device results for edge-geometry SNS weak links utilizing a variety of oxide normal metals. A comparison of the electrical properties of fabricated devices and the magnetic field response will be presented. Device reproducibility will also be discussed. This talk will also examine recent progress in fabrication of epitaxial SNS weak links on silicon-on-sapphire (SOS) substrates. SNS weak links fabricated recently are under investigation, and preliminary results on these devices will be discussed.
Document ID
20060039501
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/36050
Authors
Hunt, B. D.
Barner, J. B.
Foote, M. C.
Vasquez, R. P.
Date Acquired
August 23, 2013
Publication Date
October 3, 1993
Distribution Limits
Public
Copyright
Other
Keywords
SNS weak links oxide normal metals silicon-on-sapphire electrical properties
fabrication

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