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SEU evaluation of FeRAM memories for space applicationsSEU cross-sections were obtained for two different FeRAM memories: The 64 kbit and 256 kbit Ramtron FeRAM and the Hynix 64 kbit device. The devices were seen to have latch-up characteristics typical of commercial CMOS. Also, errors in the memory were also seen from heavy ion irradiation.
Document ID
20060039889
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/37206
Authors
Scheick, L.
Guertin, S.
Nguyen, d.
Date Acquired
August 23, 2013
Publication Date
November 4, 2002
Distribution Limits
Public
Copyright
Other
Keywords
SEU FeRAM ion irradiation

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