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A 90 GHz Amplifier Assembled Using Flip-Chip TechnologyThis letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.
Document ID
20060040558
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Samoska, L.
Pinsukanjana, P.
Gaier, T.
Smith, R.
Ksendzov, A.
Fitzsimmons, M.
Martin, S.
Lai, R.
Date Acquired
August 23, 2013
Publication Date
January 1, 1999
Publication Information
Publication: Microwave and Guided Wave Letters
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
FET amplifiers Millimeter wave FETs bump-bonding millimeter-wave circuits
millimeter-wave measurements millimeter-wave technology millimeter-wave
Gallium compounds Indium compounds Coplanar waveguides flip-chip devices
transistors
millimeter-wave amplifiers millimeter wave integarted circuits Millimeter wave

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