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A Novel, High Resolution, Non-Contact Channel Temperature Measurement TechniqueAn in-situ optical technique based on infrared emission spectroscopy has been developed for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET).
Document ID
20060041098
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/18966
Authors
Kim, Q.
Stark, B.
Kayali, S.
Date Acquired
August 23, 2013
Publication Date
March 30, 1998
Distribution Limits
Public
Copyright
Other
Keywords
temperature optical technique infrared MESFET

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