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Self-assembled III-V quantum dots: potential for silicon optoelectronicsThe basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.
Document ID
20060042411
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Leon, R.
Date Acquired
August 23, 2013
Publication Date
September 1, 2001
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Silicon Monolithic Integrated Circuits in RF Systems Symposium 2001
Location: Ann Arbor, MI
Country: United States
Start Date: September 12, 2001
End Date: September 14, 2001
Distribution Limits
Public
Copyright
Other
Keywords
nanotechnologies quantum dot devices heteroepitaxy InAs GaAs silicon
photoluminescence III-V compounds Stranski-Krastanow

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