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Development of GaN-based micro chemical sensor nodesSensors based on III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.
Document ID
20060043277
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Son, Kyung-ah
Prokopuk, Nicholas
George, Thomas
Moon, Jeong S.
Date Acquired
August 23, 2013
Publication Date
September 1, 2005
Meeting Information
Meeting: IEEE Sensors 2005
Location: Irvine, CA
Country: United States
Start Date: September 30, 2005
End Date: October 11, 2005
Distribution Limits
Public
Copyright
Other
Keywords
chemical
GaN
microsensor
extreme environment

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