Effect of anharmonicity of interatomic potential on strain distribution in semiconductor nanostructures

Experiments and theory have shown that the energy spectrum of nanostructures is extremely sensitive to the built-in strain. Knowledge of the strain distribution is therefore Experiments and theory have shown that the energy spectrum of nanostructures is extremely sensitive to the built-in strain. Knowledge of the strain distribution is therefore of utmost importance for the design of optical devices with prescribed light emission spectrum.