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THz semiconductor-based front-end receiver technology for space applicationsAdvances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.
Document ID
20060043584
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Mehdi, Imran
Siegel, Peter
Date Acquired
August 23, 2013
Publication Date
September 22, 2004
Meeting Information
Meeting: IEEE Radio and Wireless Conference
Location: Atlanta, GA
Country: United States
Start Date: September 22, 2004
Distribution Limits
Public
Copyright
Other
Keywords
Schottky diode multipliers

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