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Common base amplifier with 7 - dB gain at 176 GHz in InP mesa DHBT technologyWe report a single stage tunded amplifier that exhibits 7 dB small signal gain at 176 GHz. Common Base topology is chosen as it has the best maximum stable gain (MSG) in this frequency band when compared to common emitter and common collector topologies. The amplifiers are designed and fabricated in InP mesa double heterojunction bipolar transistor (DHBT) technology.
Document ID
20060043902
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/39026
Authors
Samoska, Lorene
Paidi, V.
Griffith, Z.
Dahlstrom, M.
Wei, Y.
Urteaga, M.
Rodell, M. J. W.
Fung, A.
Date Acquired
August 23, 2013
Publication Date
June 6, 2004
Meeting Information
Meeting: IEEE Radio Frequency Integrated Circuit Symposium
Location: Fort Worth, TX
Country: United States
Start Date: June 6, 2004
Distribution Limits
Public
Copyright
Other
Keywords
millimeter-wave amplifier
InP heterojunction bipolar transitor.
MMIC amplifier
HBT

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