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Beyond G-band : a 235 GHz InP MMIC amplifierWe present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.
Document ID
20060044028
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Dawson, Douglas
Samoska, Lorene
Fung, A. K.
Lee, Karen
Lai, Richard
Grundbacher, Ronald
Liu, Po-Hsin
Raja, Rohit
Date Acquired
August 23, 2013
Publication Date
December 1, 2005
Publication Information
Publication: IEEE Microwave and Wireless Components Letters
Volume: 15
Issue: 12
Distribution Limits
Public
Copyright
Other
Keywords
high electron mobility transistors (HEMTs)
monolithic millimeter-wave integrated circuits (MMICs)
G - band
WR3 waveguide
millimeter wave field-effect transistor (FET) amplifiers
indium phosphide

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