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Progress in MBE grown type-II superlattice photodiodesWe report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12(mu)m range. Recent devices have produced detectivities as high as 8x10 to the tenth power Jones with a differential resistance-area product greater than 6 Ohmcm(sup 2) at 80K with a long wavelength cutoff of approximately 12(mu)m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11(mu)m range without antireflection coatings.
Document ID
20060044058
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Hill, Cory J.
Li, Jian V.
Mumolo, Jason M.
Gunapala, Sarath D.
Date Acquired
August 23, 2013
Publication Date
April 17, 2006
Meeting Information
Meeting: International Society for Optical Engineering (SPIE) 2006 Defense and Security Symposium
Location: Orlando, FL
Country: United States
Start Date: April 17, 2006
End Date: April 21, 2006
Distribution Limits
Public
Copyright
Other
Keywords
molecular beam epitaxy (MBE)
suprlattices
chemical passivation
infrared detectors

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