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Observations on ion track structure in semiconductors : a phenomenological studyAn ion track structure model at the nanometer scale is presented. The model is based on electrostatic principles and is supported by observed experimental results conducted on power MOSFETs. The model predicts the existence of a transient induced electric field following the passage of an energetic heavy ion. There are two segments to the field (a radial and an axial component). It is the interaction of this transient electric field with the local environment that can trigger a catastrophic failure.
Document ID
20060044257
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Selva, L. E.
Wallace, R. E.
Date Acquired
August 23, 2013
Publication Date
July 16, 2001
Subject Category
Space Radiation
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference
Location: Vancouver, British Columbia
Country: Canada
Start Date: July 16, 2001
End Date: July 20, 2001
Distribution Limits
Public
Copyright
Other
Keywords
SEGR
ion induced electric field
ion track structures

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