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Medium power amplifiers covering 90 - 130 GHz for telescope local oscillatorsThis paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.
Document ID
20060044351
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Samoska, Lorene A.
Bryerton, Eric
Pukala, David
Peralta, Alejandro
Hu, Ming
Schmitz, Adele
Date Acquired
August 23, 2013
Publication Date
June 14, 2005
Meeting Information
Meeting: IEEE MTT-S International Microwave Symposium
Location: Long Beach, CA
Country: United States
Start Date: June 14, 2005
Distribution Limits
Public
Copyright
Other
Keywords
coplanar waveguides
InP High Electron Mobility Transistor (HEMT)
Power Amplifier
Atacama Large Millimeter Array (ALMA)
monolithic millimeter-wave integrated circuit (MMIC)

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