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The Effect of Integration of Strontium-Bismuth-Tantalate Capacitors onto SOI WafersWe report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.
Document ID
20070023902
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/40094
Authors
Strauss, Karl F. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Joshi, Vikram
Ohno, Morifumo (Oki Electric Industry Ltd. Tokyo, Japan)
Ida, Jiro (Oki Electric Industry Ltd. Tokyo, Japan)
Nagatomo, Yoshiki (Oki Electric Industry Ltd. Tokyo, Japan)
Date Acquired
August 23, 2013
Publication Date
March 4, 2006
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Aerospace Conference
Location: Big Sky, MT
Country: United States
Start Date: March 4, 2006
End Date: March 11, 2006
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: 1265898
Distribution Limits
Public
Copyright
Other
Keywords
memory
non-volatile
Ferro-electric
SOI

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