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A Statistical Approach to Characterizing the Reliability of Systems Utilizing HBT DevicesThis paper presents a statistical approach to characterizing the reliability of systems with HBT devices. The proposed approach utilizes the statistical reliability information of the HBT individual devices, along with the analysis on the critical paths of the system, to provide more accurate and more comprehensive reliability information about the HBT systems compared to the conventional worst-case method.
Document ID
20070034957
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/40489
Authors
Chen, Yuan (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Wang, Qing (California State Univ. Chico, CA, United States)
Kayali, Sammy (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 24, 2013
Publication Date
October 24, 2004
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 19th Annual Workshop on Compound Semiconductor Reliability
Location: Monterey, CA
Country: United States
Start Date: October 24, 2004
Distribution Limits
Public
Copyright
Other
Keywords
hetero bipolar transistors (HBTs)
system reliability

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