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Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOSAs microelectronics is scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of electromigration (EM), time-dependent-dielectric-breakdown (TDDB) and hot carrier degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s).
Document ID
20090011224
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Authors
White, Mark
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Vu, Duc
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nguyen, Duc
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Ruiz, Ron
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Chen, Yuan
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bernstein, Joseph B.
(Maryland Univ. College Park, MD, United States)
Date Acquired
August 24, 2013
Publication Date
October 16, 2006
Publication Information
Publication: 2006 International Integrated Reliability Workshop Final Report
Publisher: Institute of Electrical and Electronics Engineers
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 2006 International Integrated Reliability Workshop (Poster Presentation)
Country: United States
Start Date: October 16, 2006
End Date: September 19, 2006
Distribution Limits
Public
Copyright
Other
Keywords
CMOS integrated circuits
accelerated stress testing
advanced technology
failure analysis

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