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Total Ionizing Dose Effects in Bipolar and BiCMOS DevicesThis paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.
Document ID
20090014095
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
Authors
Chavez, Rosa M.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Rax, Bernard G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Scheick, Leif Z.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Johnston, Allan H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
FROM
(NASA Headquarters Washington, DC United States)
Date Acquired
August 24, 2013
Publication Date
July 11, 2005
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Radiation Effects Data Workshop, 2005
Country: United States
Start Date: July 11, 2005
End Date: July 15, 2005
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Other
Keywords
radiation effects
BiCMOS analogue integrated circuits
integrated circuit testing
bipolar analogue integrated circuits

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