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Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI DevicesWe propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.
Document ID
20090019030
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/41160
Authors
Adell, Phillipe C. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Barnaby, H. J. (Arizona State Univ. Tempe, AZ, United States)
Schrimpf, R. D. (Vanderbilt Univ. Nashville, TN, United States)
Vermeire, B. (Arizona State Univ. Tempe, AZ, United States)
Date Acquired
August 24, 2013
Publication Date
June 23, 2007
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Nuclear and Space Radiation Effects Conference (NSREC)
Location: Honolulu, HI
Country: United States
Start Date: July 23, 2007
End Date: July 27, 2007
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Other
Keywords
high current regime
fully depleted
total ionizing dose
band to band tunneling
silicon on insulator (SOI)
gate induced drain leakage (GIDL)

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