Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
Authors
Kangaslahti, Pekka (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States) Deal, W. R. (Northrop Grumman Corp. Redondo Beach, CA, United States) Mei, X. B. (Northrop Grumman Corp. Redondo Beach, CA, United States) Lai, R. (Northrop Grumman Corp. Redondo Beach, CA, United States) Date Acquired
August 24, 2013
Publication Date
March 1, 2007
Subject Category
Electronics And Electrical Engineering Meeting Information
Meeting: IEEE Aerospace Conference
Location: Big Sky, MT
Country: United States
Start Date: March 1, 2007
End Date: March 8, 2007
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: MIPR-06-U037
CONTRACT_GRANT: W911QX-06-C-0050
Distribution Limits
Public
Keywords
high electron mobility transistors (HEMT's)indium phosphide