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Broadband Characterization of a 100 to 180 GHz AmplifierAtmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).
Document ID
20090026402
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Kangaslahti, Pekka
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Deal, W. R.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Mei, X. B.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Lai, R.
(Northrop Grumman Corp. Redondo Beach, CA, United States)
Date Acquired
August 24, 2013
Publication Date
March 1, 2007
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Aerospace Conference
Location: Big Sky, MT
Country: United States
Start Date: March 1, 2007
End Date: March 8, 2007
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: MIPR-06-U037
CONTRACT_GRANT: W911QX-06-C-0050
Distribution Limits
Public
Copyright
Other
Keywords
high electron mobility transistors (HEMT's)
indium phosphide

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