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NASA 2009 Body of Knowledge (BoK) Through-Slicon Via TechnologyThrough-silicon via (TSV) is the latest in a progression of technologies for stacking silicon devices in three dimensions (3D). Driven by the need for improved performance, methods to use short vertical interconnects to replace the long interconnects found in 2D structures have been developed. The industry is moving past the feasibility (research and development [R and D]) phase for TSV technology into the commercialization phase where economic realities will determine which technologies are adopted. Low-cost fine via hole formation and highly reliable via filling technologies have been demonstrated; process equipment and materials are available. Even though design, thermal, and test issues remain, much progress has been made.
Document ID
20100009711
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
Authors
Gerke, David
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 25, 2013
Publication Date
November 1, 2009
Subject Category
Man/System Technology And Life Support
Report/Patent Number
JPL Publ 09-28
Funding Number(s)
WBS: WBS 724927.40.43
Distribution Limits
Public
Copyright
Other
Keywords
3D packaging
electronic packaging
through silicon vias

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