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Lightning Pin Injection Test: MOSFETS in "ON" StateThe test objective was to evaluate MOSFETs for induced fault modes caused by pin-injecting a standard lightning waveform into them while operating. Lightning Pin-Injection testing was performed at NASA LaRC. Subsequent fault-mode and aging studies were performed by NASA ARC researchers using the Aging and Characterization Platform for semiconductor components. This report documents the test process and results, to provide a basis for subsequent lightning tests. The ultimate IVHM goal is to apply prognostic and health management algorithms using the features extracted during aging to allow calculation of expected remaining useful life. A survey of damage assessment techniques based upon inspection is provided, and includes data for optical microscope and X-ray inspection. Preliminary damage assessments based upon electrical parameters are also provided.
Document ID
20110005561
Acquisition Source
Langley Research Center
Document Type
Technical Memorandum (TM)
Authors
Ely, Jay J.
(NASA Langley Research Center Hampton, VA, United States)
Nguyen, Truong X.
(NASA Langley Research Center Hampton, VA, United States)
Szatkowski, George N.
(NASA Langley Research Center Hampton, VA, United States)
Koppen, Sandra V.
(NASA Langley Research Center Hampton, VA, United States)
Mielnik, John J.
(Lockheed Martin Corp. Hampton, VA, United States)
Vaughan, Roger K.
(Lockheed Martin Corp. Hampton, VA, United States)
Saha, Sankalita
(NASA Ames Research Center Moffett Field, CA, United States)
Wysocki, Philip F.
(ASRC Aerospace Corp. Moffett Fleld, CA, United States)
Celaya, Jose R.
(Stinger Ghaffarian Technologies, Inc. (SGT, Inc.) Moffett Field, CA, United States)
Date Acquired
August 25, 2013
Publication Date
January 1, 2011
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA/TM-2011-217047
L-19962
NF1676L-11918
Funding Number(s)
WBS: WBS 645846.02.07.07.12.02
Distribution Limits
Public
Copyright
Public Use Permitted.
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