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Degradation of Leakage Currents in Solid Tantalum Capacitors Under Steady-State Bias ConditionsDegradation of leakage currents in various types of solid tantalum capacitors under steady-state bias conditions was investigated at temperatures from 105 oC to 170 oC and voltages up to two times the rated voltage. Variations of leakage currents with time under highly accelerated life testing (HALT) and annealing, thermally stimulated depolarization currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. During HALT the currents increase gradually up to three orders of magnitude in some cases, and then stabilize with time. This degradation is reversible and annealing can restore the initial levels of leakage currents. The results are attributed to migration of positively charged oxygen vacancies in tantalum pentoxide films that diminish the Schottky barrier at the MnO2/Ta2O5 interface and increase electron injection. A simple model allows for estimation of concentration and mobility of oxygen vacancies based on the level of current degradation.
Document ID
20110015253
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Teverovsky, Alexander A.
(Dell Perot Systems Greenbelt, MD, United States)
Date Acquired
August 25, 2013
Publication Date
June 20, 2010
Publication Information
ISBN: 978-1-4244-6412-8
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC.CP.4860.2011
Meeting Information
Meeting: 2010 Electronic Components and Technology Conference
Location: Las Vegas, NV
Country: United States
Start Date: June 1, 2010
End Date: June 4, 2010
Sponsors: INTEL Corp.
Distribution Limits
Public
Copyright
Other

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