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A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 CA novel tungsten-nickel ohmic contact metallization on 4H-SiC and 6H-SiC capable of surviving temperatures as high as 900 C is reported. Preliminary results revealed the following: 1) ohmic contact on n-type 4H-SiC having net doping levels (Nd's) of 1.4 and 2 x 10(exp 19) per cubic centimeter, with specific contact resistances rhosNd's of 7.69 x 10(exp -4) and 5.81 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after rapid thermal annealing (RTA), and 5.9 x 10(exp -3) and 2.51 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after subsequent soak at 900 C for 1 h in argon, and 2) ohmic contact on n- and p-type 6H-SiC having Nd > 2 x 10(exp 19) and Na > 1 x 10(exp 20) per cubic centimeter, with rhosNd = 5 x 10(exp -5) and rhosNa = 2 X 10(exp -4) OMEGA (raised dot) square centimeter, respectively, after RTA, and rhosNd = 2.5 x 10 (exp -5) and rhosNa = 1.5 x 10(exp -4) OMEGA (raised dot) square centimeter after subsequent treatment at 900 C for 1 h in argon, respectively.
Document ID
20110016106
Acquisition Source
Glenn Research Center
Document Type
Reprint (Version printed in journal)
Authors
Okojie, Robert S.
(NASA Glenn Research Center Cleveland, OH, United States)
Evans, Laura J.
(NASA Glenn Research Center Cleveland, OH, United States)
Lukco, Dorothy
(NASA Glenn Research Center Cleveland, OH, United States)
Morris, Joseph P.
(Ohio Univ. Athens, OH, United States)
Date Acquired
August 25, 2013
Publication Date
August 1, 2010
Publication Information
Publication: Electron Device Letters, IEEE
Publisher: Institute of Electrical and Electronics Engineers
Volume: 31
Issue: 8
ISSN: 0741-3106
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-17957
Distribution Limits
Public
Copyright
Other

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