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Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETsThe relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.
Document ID
20120008333
Acquisition Source
Goddard Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Goldsman, Neil (Maryland Univ. College Park, MD, United States)
Liu, Sandra (International Rectifier Corp. El Segundo, CA, United States)
Titus, Jeffrey L. (Naval Sea Systems Command Crane, IN, United States)
Ladbury, Raymond L. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Kim, Hak S. (MEI Technologies, Inc. United States)
Phan, Anthony M. (MEI Technologies, Inc. United States)
LaBel, Kenneth A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Zafrani, Max (International Rectifier Corp. El Segundo, CA, United States)
Sherman, Phillip (International Rectifier Corp. El Segundo, CA, United States)
Date Acquired
August 25, 2013
Publication Date
January 1, 2012
Subject Category
Solid-State Physics
Report/Patent Number
GSFC.JA.5840.2012
GSFC.CP.6574.2012
Report Number: GSFC.JA.5840.2012
Report Number: GSFC.CP.6574.2012
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference
Location: Las Vegas, NV
Country: United States
Start Date: July 25, 2012
End Date: July 29, 2012
Distribution Limits
Public
Copyright
Public Use Permitted.

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