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Challenges for Radiation Hardness Assurance (RHA) on Power MOSFETs
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Author and Affiliation:
Lauenstein, Jean-Marie(NASA Goddard Space Flight Center, Greenbelt, MD, United States)
Abstract: No abstract available
Publication Date: Jun 11, 2012
Document ID:
20120014270
(Acquired Oct 03, 2012)
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Report/Patent Number: GSFC.CPR.6932.2012
Document Type: Oral/Visual Presentation
Meeting Information: NASA Electronic Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW); 11-13 Jun. 2012; Greenbelt, MD; United States
Financial Sponsor: NASA Goddard Space Flight Center; Greenbelt, MD, United States
Organization Source: NASA Goddard Space Flight Center; Greenbelt, MD, United States
Description: 28p; In English; Original contains color illustrations
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: FIELD EFFECT TRANSISTORS; METAL OXIDE SEMICONDUCTORS; RADIATION HARDENING; SINGLE EVENT UPSETS; SILICON JUNCTIONS; FAILURE MODES; LINEAR ENERGY TRANSFER (LET); SUBSTRATES
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