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Total Dose Effects on Bipolar Integrated Circuits at Low Temperature
External Online Source: hdl:2014/42694
Author and Affiliation:
Johnston, A. H.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States);
Swimm, R. T.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States);
Thorbourn, D. O.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Abstract: Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.
Publication Date: Jul 07, 2012
Document ID:
20130010591
(Acquired Mar 07, 2013)
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Conference Paper
Meeting Information: IEEE Nuclear and Space Radiation Effects Conference (NSREC 2012); 16-20 Jul. 2012; Miami, FL; United States
Meeting Sponsor: Institute of Electrical and Electronics Engineers; United States
Financial Sponsor: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Organization Source: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: 8p; In English; Original contains color illustrations
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: BIPOLARITY; DOSAGE; EMITTERS; ENERGY GAPS (SOLID STATE); INTEGRATED CIRCUITS; IRRADIATION; LOW TEMPERATURE; RADIATION DAMAGE; RANDOM WALK; TEMPERATURE DEPENDENCE; TRANSISTORS
Other Descriptors: LINEAR INTEGRATED CIRCUITS; LOW TEMPERATURES; SPACE RADIATION; TOTAL DOSE EFFECTS
Availability Source: Other Sources
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