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Dual ohmic contact to N- and P-type silicon carbide
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Author and Affiliation: Okojie, Robert S. [Inventor]
Abstract: Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.
Publication Date: Feb 12, 2013
Document ID:
20130010697
(Acquired Mar 09, 2013)
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Report/Patent Number: US-Patent-8,373,175, US-Patent-Appl-SN-12/791,276
Document Type: Patent
Financial Sponsor: NASA; Washington, DC United States
Organization Source: NASA; Washington, DC United States
Description: 32p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: ACCEPTOR MATERIALS; ELECTRICAL RESISTIVITY; FABRICATION; INVENTIONS; PATENTS; RELIABILITY; SEMICONDUCTOR DEVICES; SEMICONDUCTORS (MATERIALS); SILICON CARBIDES
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