Record Details

Packaging Technologies for High Temperature Electronics and Sensors
NTRS Full-Text: Click to View  [PDF Size: 344 KB]
Author and Affiliation:
Chen, Liang-Yu(Ohio Aerospace Inst., Cleveland, OH, United States);
Hunter, Gary W.(NASA Glenn Research Center, Cleveland, OH, United States);
Neudeck, Philip G.(NASA Glenn Research Center, Cleveland, OH, United States);
Beheim, Glenn M.(NASA Glenn Research Center, Cleveland, OH, United States);
Spry, David J.(NASA Glenn Research Center, Cleveland, OH, United States);
Meredith, Roger D.(NASA Glenn Research Center, Cleveland, OH, United States)
Abstract: This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.
Publication Date: May 13, 2013
Document ID:
(Acquired Jul 11, 2013)
Report/Patent Number: GRC-E-DAA-TN8399, GRC-E-DAA-TN8401
Document Type: Conference Paper
Publication Information: (SEE 20140004927)
Meeting Information: 59th International Instrumentation Symposium and MFPT; 13-17 May 2013; Cleveland, OH; United States
Meeting Sponsor: Society for Machinery Failure Prevention Technology; Winchester, VA, United States
Contract/Grant/Task Num: NNC07BA13B; WBS 284848.
Financial Sponsor: NASA Glenn Research Center; Cleveland, OH, United States
Organization Source: NASA Glenn Research Center; Cleveland, OH, United States
Description: 6p; In English; Original contains color and black and white illustrations
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright; Distribution as joint owner in the copyright
› Back to Top
Facebook icon, External Link to NASA STI page on Facebook Twitter icon, External Link to NASA STI on Twitter YouTube icon, External Link to NASA STI Channel on YouTube RSS icon, External Link to New NASA STI RSS Feed
Find Similar Records
NASA Logo, External Link

NASA Official: Gerald Steeman

Sponsored By: NASA Scientific and Technical Information Program

Site Curator: STI Support Services

Last Modified: February 10, 2015

Privacy Policy & Important Notices Disclaimers, Copyright, Terms of Use Freedom of Information Act NASA OCIO Free Adobe PDF Reader Free MS Word Viewer