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Packaging Technologies for High Temperature Electronics and Sensors
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Author and Affiliation:
Chen, Liang-Yu(Ohio Aerospace Inst., Cleveland, OH, United States);
Hunter, Gary W.(NASA Glenn Research Center, Cleveland, OH, United States);
Neudeck, Philip G.(NASA Glenn Research Center, Cleveland, OH, United States);
Beheim, Glenn M.(NASA Glenn Research Center, Cleveland, OH, United States);
Spry, David J.(NASA Glenn Research Center, Cleveland, OH, United States);
Meredith, Roger D.(NASA Glenn Research Center, Cleveland, OH, United States)
Abstract: This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.
Publication Date: May 13, 2013
Document ID:
20130013849
(Acquired Jul 11, 2013)
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Report/Patent Number: GRC-E-DAA-TN8399
Document Type: Conference Paper
Meeting Information: 59th International Instrumentation Symposium and MFPT; 13-17 May 2013; Cleveland, OH; United States
Contract/Grant/Task Num: NNC07BA13B; WBS 284848.02.04.03.02.02
Financial Sponsor: NASA Glenn Research Center; Cleveland, OH, United States
Organization Source: NASA Glenn Research Center; Cleveland, OH, United States
Description: 7p; In English; Original contains color and black and white illustrations
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright; Distribution as joint owner in the copyright
NASA Terms: ALUMINUM NITRIDES; CERAMICS; CHIPS (ELECTRONICS); CIRCUIT BOARDS; ELECTRONIC PACKAGING; GOLD; HIGH TEMPERATURE; METALLIZING; SENSORS; SILICON CARBIDES; SUBSTRATES; TEMPERATURE SENSORS
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