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Prognostics of Power Mosfets Under Thermal Stress Accelerated Aging Using Data-Driven and Model-Based MethodologiesAn approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor switching devices that are instrumental in electronics equipment such as those used in operation and control of modern aircraft and spacecraft. The MOSFETs examined here were aged under thermal overstress in a controlled experiment and continuous performance degradation data were collected from the accelerated aging experiment. Dieattach degradation was determined to be the primary failure mode. The collected run-to-failure data were analyzed and it was revealed that ON-state resistance increased as die-attach degraded under high thermal stresses. Results from finite element simulation analysis support the observations from the experimental data. Data-driven and model based prognostics algorithms were investigated where ON-state resistance was used as the primary precursor of failure feature. A Gaussian process regression algorithm was explored as an example for a data-driven technique and an extended Kalman filter and a particle filter were used as examples for model-based techniques. Both methods were able to provide valid results. Prognostic performance metrics were employed to evaluate and compare the algorithms.
Document ID
20140010628
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Celaya, Jose
(Stinger Ghaffarian Technologies, Inc. (SGT, Inc.) Moffett Field, CA, United States)
Saxena, Abhinav
(Stinger Ghaffarian Technologies, Inc. (SGT, Inc.) Moffett Field, CA, United States)
Saha, Sankalita
(MCT, Inc. Moffett Field, CA, United States)
Goebel, Kai F.
(NASA Ames Research Center Moffett Field, CA, United States)
Date Acquired
August 13, 2014
Publication Date
September 25, 2011
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
ARC-E-DAA-TN3991
Funding Number(s)
CONTRACT_GRANT: NNA08CG83C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
Electrolytic capacitors
PHM
MOSFET prognostics
Prognostics
Electronics Prognostics
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