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Minority Carrier Lifetime Studies of Narrow Bandgap Antimonide SuperlatticesIn this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.
Document ID
20150008669
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Hoglund, Linda
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Ting, David Z.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Khoshakhlagh, Arezou
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Soibel, Alexander
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hill, Cory J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Fisher, Anita
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Keo, Sam
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Gunapala, Sarath D.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
May 21, 2015
Publication Date
February 1, 2014
Subject Category
Optics
Meeting Information
Meeting: SPIE Photonics West 2014
Location: San Francisco, CA
Country: United States
Start Date: February 1, 2014
End Date: February 6, 2014
Sponsors: International Society for Optical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
minority carrier lifetime
heterostructure
photoluminescence
infrared
superlattice

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