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Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash MemoriesHeavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.



Document ID
20150009133
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Irom, Farokh
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nguyen, Duc N.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Harboe-Sorensen, Reno
(European Space Agency. European Space Research and Technology Center, ESTEC Noordwijk, Netherlands)
Virtanen, Ari
(Jyvaskyla Univ. Finland)
Date Acquired
June 1, 2015
Publication Date
September 14, 2009
Subject Category
Solid-State Physics
Meeting Information
Meeting: European Conference on Radiation and its Effects on Components and Systems (RADECS 2009)
Location: Bruges
Country: Belgium
Start Date: September 14, 2009
End Date: September 18, 2009
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Other
Keywords
nonvolatile memory
x-ray
total ionizing dose
floating gate
single event upset
gamma rays
single event effects

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