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Silicon Carbide Electronic DevicesThe status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.
Document ID
20150022211
Acquisition Source
Glenn Research Center
Document Type
Other
Authors
Neudeck, P. G.
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
December 3, 2015
Publication Date
January 1, 2001
Publication Information
Publication: Encyclopedia of Materials: Science and Technology
Publisher: Elsevier Science Ltd.
ISBN: 0-08-0431526
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GRC-WO-667843
Funding Number(s)
TASK: Y0M2392
PROJECT: RTOP 519-20-53
Distribution Limits
Public
Copyright
Other

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