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Infrared Dielectric Properties of Low-Stress Silicon OxideSilicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.
Document ID
20160005763
Acquisition Source
Goddard Space Flight Center
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Cataldo, Giuseppe
(Universities Space Research Association Greenbelt, MD, United States)
Wollack, Edward J.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Brown, Ari D.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Miller, Kevin H.
(NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
May 3, 2016
Publication Date
March 17, 2016
Publication Information
Publication: Optics Letters
Publisher: Optical Society of America
Volume: 41
Issue: 7
Subject Category
Optics
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN31516
Funding Number(s)
CONTRACT_GRANT: NNG06EO90A
Distribution Limits
Public
Copyright
Other
Keywords
Silicon oxide
transmittance spectrum
dielectric function

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