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Instruction manual for epitaxial apparatusInstruction manual for apparatus using programmer operation of electronic valves for etching and growth of single crystal silicon, deposition of silicon dioxide, and nucleation site treatment
Document ID
19660016949
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Halsor, J. L. (Westinghouse Electric Corp. Baltimore, MD, United States)
Date Acquired
August 3, 2013
Publication Date
September 30, 1965
Subject Category
Machine Elements And Processes
Report/Patent Number
NASA-CR-74954
Report Number: NASA-CR-74954
Accession Number
66N26239
Funding Number(s)
CONTRACT_GRANT: NAS5-3758
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
MANUAL
SILICON COMPOUND
LABORATORY APPARATUS
NUCLEATION PROCESS
ETCHING
CRYSTAL GROWTH

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