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Growth of 2H silicon carbide crystalsOptimal growths of silicon carbide polytype crystals by methyltrichlorosilane reduction
Document ID
19690020694
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Technical Note (TN)
Authors
Powell, J. A. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 2, 2013
Publication Date
July 1, 1969
Subject Category
Physics, Solid-State
Report/Patent Number
NASA-TN-D-5313
Report Number: NASA-TN-D-5313
Accession Number
69N30072
Funding Number(s)
CONTRACT_GRANT: 120-27-01-25-22
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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