NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
A method for the deposition of beta-silicon carbide by isoepitaxyDeposition method for epitaxial beta SiC films having high degree of crystallographic perfection
Document ID
19690024104
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Haq, K. E. (NASA Electronics Research Center Cambridge, MA, United States)
Date Acquired
September 2, 2013
Publication Date
May 26, 1969
Subject Category
Physics, Solid-State
Report/Patent Number
Patent Number: NASA-CASE-ERC-10120
Patent Application Number: US-PATENT-APPL-SN-827597
Accession Number
69N33482
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-ERC-10120
Patent Application
US-PATENT-APPL-SN-827597

Related Records

There are no records associated with this record.
No Preview Available