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Gate protective device for SOS arrayProtective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.
Document ID
19720000754
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Meyer, J. E., Jr. (David Sarnoff Res. Center)
Scott, J. H. (David Sarnoff Res. Center)
Date Acquired
August 6, 2013
Publication Date
December 1, 1972
Subject Category
Electronic Components And Circuits
Report/Patent Number
HQN-10745
Accession Number
72B10755
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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