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Diode pumped Nd:YAG laser developmentA low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.
Document ID
19770015520
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Reno, C. W.
(RCA Advanced Technology Labs. Camden, NJ, United States)
Herzog, D. G.
(RCA Advanced Technology Labs. Camden, NJ, United States)
Date Acquired
September 3, 2013
Publication Date
May 1, 1976
Subject Category
Lasers And Masers
Report/Patent Number
ATL-CR-76-02
NASA-CR-152492
Report Number: ATL-CR-76-02
Report Number: NASA-CR-152492
Accession Number
77N22464
Funding Number(s)
CONTRACT_GRANT: NAS5-23281
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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