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Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array ProjectA technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.
Document ID
19790016302
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Baghdadi, A.
(Motorola, Inc. Phoenix, AZ, United States)
Gurtler, R. W.
(Motorola, Inc. Phoenix, AZ, United States)
Legge, R.
(Motorola, Inc. Phoenix, AZ, United States)
Sopori, B.
(Motorola, Inc. Phoenix, AZ, United States)
Rice, M. J.
(Motorola, Inc. Phoenix, AZ, United States)
Ellis, R. J.
(Motorola, Inc. Phoenix, AZ, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1979
Subject Category
Energy Production And Conversion
Report/Patent Number
REPT-2256/13
TQR-10
NASA-CR-158570
Report Number: REPT-2256/13
Report Number: TQR-10
Report Number: NASA-CR-158570
Accession Number
79N24473
Funding Number(s)
PROJECT: JPL PROJ. 2319-25
OTHER: JPL-954376
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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