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Epitaxial silicon growth for solar cellsThe epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.
Document ID
19790023587
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Daiello, R. V.
(RCA Labs. Princeton, NJ, United States)
Robinson, P. H.
(RCA Labs. Princeton, NJ, United States)
Richman, D.
(RCA Labs. Princeton, NJ, United States)
Date Acquired
September 3, 2013
Publication Date
April 1, 1979
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-162177
DOE/JPL-954817-79/4
Accession Number
79N31758
Funding Number(s)
CONTRACT_GRANT: JPL-954817
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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