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Device model for FETSIM circuit simulation programA description of the MOS transistor used in the FETSIM analysis program is presented. CMOS/SOS device parameters are included. Typical device mobilities are given as well as the empirically determined constants necessary to model second-order effect conductance variations due to gate voltage and saturated drain voltage.
Document ID
19790024294
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Ramondetta, P. (RCA Government Communications Systems Camden, NJ, United States)
Date Acquired
August 9, 2013
Publication Date
March 1, 1977
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-150321
Report Number: NASA-CR-150321
Accession Number
79N32465
Funding Number(s)
CONTRACT_GRANT: NAS8-31325
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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