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Effect of Yttria additives on properties of pressureless-sintered silicon nitrideSi3N4-base ceramics were made from milled Si3N4 containing 11.1 wt% SiO2 and oxide additives by pressureless sintering at 1760 C. The four-point-average moduli of rupture were 460, 515, and 515 MPa at room temperature and 270, 256, and 227 MPa at 1400 C for compositions with 3.67, 7.22, and 14.0 wt% Y2O3, respectively. The oxidation resistance of these compositions decreased with increasing Y2O3 in the 600 to 1400 C range, and no surface oxide cracking or spalling was noted. Partial substitution of Al2O3 for Y2O3 reduced both strength and oxidation resistance.
Document ID
19810022823
Acquisition Source
Legacy CDMS
Document Type
Technical Publication (TP)
Authors
Arias, A.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 4, 2013
Publication Date
September 1, 1981
Subject Category
Nonmetallic Materials
Report/Patent Number
E-751
NASA-TP-1899
Report Number: E-751
Report Number: NASA-TP-1899
Accession Number
81N31366
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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