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Sputtered silicon nitride coatings for wear protectionSilicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.
Document ID
19820012440
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Grill, A.
(Ben Gurion Univ. Cleveland, OH, United States)
Aron, P. R.
(NASA Lewis Research Center)
Date Acquired
September 4, 2013
Publication Date
January 1, 1982
Subject Category
Nonmetallic Materials
Report/Patent Number
NAS 1.15:82819
NASA-TM-82819
E-1143
Meeting Information
Meeting: Intern. Conf. on Met. Coatings and Process Technol.
Location: San Diego, CA
Country: United States
Start Date: April 4, 1982
End Date: April 9, 1982
Accession Number
82N20314
Funding Number(s)
PROJECT: RTOP 506-53-12
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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