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Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cellsThe n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.
Document ID
Document Type
Conference Paper
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K.
(NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1985
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.15:87136
Meeting Information
Photovoltaic Specialists Conf.(Las Vegas, NV)
Accession Number
Funding Number(s)
PROJECT: RTOP 506-41-42
Distribution Limits
Work of the US Gov. Public Use Permitted.
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