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Potential for use of indium phosphide solar cells in the space radiation environmentIndium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.
Document ID
Document Type
Conference Paper
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K.
(NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1985
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.15:87157
Meeting Information
Photovoltaic Specialists Conference(Las Vegas, NV)
Accession Number
Funding Number(s)
PROJECT: RTOP 506-41-11
Distribution Limits
Work of the US Gov. Public Use Permitted.
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